Influence of Growth Conditions on the Structural and Opto-electronic Quality of GaAsBi

Rockett, T.B.O., Richards, R.D., Gu, Y. et al. (4 more authors) (2017) Influence of Growth Conditions on the Structural and Opto-electronic Quality of GaAsBi. In: Journal of Crystal Growth. MBE 2016 - 19th International Conference on Molecular Beam Epitaxy, 04/09/2016 - 09/09/2016, Montpellier, France. Elsevier .

Abstract

Metadata

Authors/Creators:
  • Rockett, T.B.O.
  • Richards, R.D.
  • Gu, Y.
  • Harun, F.
  • Liu, Y.
  • Zhou, Z.
  • David, J.P.R.
Copyright, Publisher and Additional Information: © 2017 Elsevier. This is an author produced version of a paper subsequently published in Journal of Crystal Growth. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/)
Keywords: A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting ternary compounds; B3. Heterojunction semiconductor devices; B3. Infrared devices
Dates:
  • Published (online): 4 February 2017
  • Accepted: 1 February 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 15 Feb 2017 13:58
Last Modified: 04 Feb 2018 01:38
Published Version: https://doi.org/10.1016/j.jcrysgro.2017.02.004
Status: Published online
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.jcrysgro.2017.02.004
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