Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

Lioliou, G., Meng, X., Ng, J.S. orcid.org/0000-0002-1064-0410 et al. (1 more author) (2016) Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes. Journal of Applied Physics, 119 (12). 124507-1-124507-9. ISSN 0021-8979

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Copyright, Publisher and Additional Information: © 2016 AIP Publishing. This is an author produced version of a paper subsequently published in Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 28 March 2016
  • Published (online): 25 March 2016
  • Accepted: 15 March 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 16 Feb 2017 10:03
Last Modified: 11 Apr 2017 00:59
Published Version: https://doi.org/10.1063/1.4944892
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.4944892

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