Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

Qian, H. orcid.org/0000-0003-4597-6325, Lee, K.B., Vajargah, S.H. et al. (8 more authors) (2017) Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, 459. pp. 185-188. ISSN 0022-0248

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2016 Elsevier. This is an author produced version of a paper subsequently published in Journal of Crystal Growth. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/)
Keywords: A1. Wet etching; A1. Semi-polar (11-22) GaN; A3. Molecular beam epitaxy; A3. Metalorganic chemical vapour deposition; B1. AlGaN/GaN; B3. Vertical Heterostructure Field Effect Transisto (VHFET)
Dates:
  • Published: 1 February 2017
  • Published (online): 8 December 2016
  • Accepted: 7 December 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)UNSPECIFIED
Depositing User: Symplectic Sheffield
Date Deposited: 21 Dec 2016 11:04
Last Modified: 08 Dec 2017 01:38
Published Version: https://doi.org/10.1016/j.jcrysgro.2016.12.025
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.jcrysgro.2016.12.025

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