Influence of strain on emission from GaN-on-Si microdisks

Zhang, Y., Huang, J-A., Li, K.H. et al. (4 more authors) (2016) Influence of strain on emission from GaN-on-Si microdisks. Journal of Physics D: Applied Physics, 49 (37). p. 375103. ISSN 0022-3727

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2016 IOP Publishing.
Keywords: GaN-based microcavities; optical micro-resonators; strain-relaxation effects; GaN on Si microdisks; near-field microscopy
Dates:
  • Published: 18 August 2016
  • Accepted: 28 July 2016
  • Published (online): 18 August 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/M015181/1
Depositing User: Symplectic Sheffield
Date Deposited: 19 Dec 2016 15:59
Last Modified: 19 Dec 2016 15:59
Published Version: http://doi.org/10.1088/0022-3727/49/37/375103
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/0022-3727/49/37/375103

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