Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

Wang, T. orcid.org/0000-0001-5976-4994 (2016) Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission. Semiconductor Science and Technology, 31 (9). 093003-093003. ISSN 0268-1242

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2016 IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: semipolar GaN; overgrowth; InGaN; LED
Dates:
  • Published: 1 September 2016
  • Accepted: 23 June 2016
  • Published (online): 10 August 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ROYAL SOCIETYIE131699
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/M003132/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/L017024/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/M015181/1
Depositing User: Symplectic Sheffield
Date Deposited: 19 Dec 2016 16:22
Last Modified: 19 Dec 2016 16:22
Published Version: http://doi.org/10.1088/0268-1242/31/9/093003
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/0268-1242/31/9/093003

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