Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Kesaria, M., de la Mare, M. and Krier, A. (2016) Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics, 49 (43). p. 435107. ISSN 0022-3727

Abstract

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Authors/Creators:
  • Kesaria, M.
  • de la Mare, M.
  • Krier, A.
Copyright, Publisher and Additional Information: © 2016 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: dilute nitride; InAsSbN; MBE; photodiodes
Dates:
  • Published: 4 October 2016
  • Accepted: 5 September 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 15 Nov 2016 13:58
Last Modified: 15 Nov 2016 13:58
Published Version: http://dx.doi.org/10.1088/0022-3727/49/43/435107
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/0022-3727/49/43/435107

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