Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform

Wirths, S, Geiger, R, Schulte-Braucks, C et al. (9 more authors) (2016) Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform. In: Technical Digest - International Electron Devices Meeting, IEDM. Electron Devices Meeting (IEDM), 2015 IEEE International, 07-09 Dec 2015, Hilton Washington, Washington DC, USA. IEEE , 2.6.1-2.6.4. ISBN 9781467398930

Abstract

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Authors/Creators:
  • Wirths, S
  • Geiger, R
  • Schulte-Braucks, C
  • Von Den Driesch, N
  • Stange, D
  • Zabel, T
  • Ikonic, Z
  • Hartmann, JM
  • Mantl, S
  • Sigg, H
  • Grutzmacher, D
  • Buca, D
Copyright, Publisher and Additional Information: (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Keywords: Photonic band gap, Strain, Lasers, Optical device fabrication, Optical resonators, Cavity resonators, Temperature measurement
Dates:
  • Published: 18 February 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 15 Nov 2016 16:00
Last Modified: 20 Jan 2018 06:27
Published Version: https://doi.org/10.1109/IEDM.2015.7409615
Status: Published
Publisher: IEEE
Identification Number: https://doi.org/10.1109/IEDM.2015.7409615

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