Telecommunication wavelength GaAsBi light emitting diodes

Richards, R.D. orcid.org/0000-0001-7043-8372, Hunter, C.J., Bastiman, F. et al. (2 more authors) (2016) Telecommunication wavelength GaAsBi light emitting diodes. In: IET Optoelectronics. IET Optoelectronics http://dx.doi.org/10.1049/iet-opt.2015.0051, 10 (2). Institution of Engineering and Technology , pp. 34-38.

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2016 IET. This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)
Keywords: X-ray diffraction; current density; electroluminescence; gallium arsenide; gallium compounds; III-V semiconductors; light emitting diodes; localised states
Dates:
  • Accepted: 30 July 2015
  • Published (online): 29 February 2016
  • Published: 29 February 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
CENTRE FOR INTERGRATED PHOTONICS LTDUNSPECIFIED
Depositing User: Symplectic Sheffield
Date Deposited: 01 Nov 2016 14:37
Last Modified: 01 Nov 2016 14:37
Status: Published
Publisher: Institution of Engineering and Technology
Series Name: http://dx.doi.org/10.1049/iet-opt.2015.0051
Refereed: Yes
Identification Number: https://doi.org/10.1049/iet-opt.2015.0051

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