InAsP/AlGaInP/GaAs QD laser operating at ∼770 nm

Krysa, A.B. orcid.org/0000-0001-8320-7354, Roberts, J.S., Devenson, J. et al. (4 more authors) (2016) InAsP/AlGaInP/GaAs QD laser operating at ∼770 nm. In: Journal of Physics: Conference Series. V International Symposium on Coherent Optical Radiation of Semiconductor Compounds and Structures, 23-26 Nov 2015, Moscow, Russia. IOP Publishing: Conference Series .

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Copyright, Publisher and Additional Information: Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Dates:
  • Published: 1 September 2016
  • Accepted: 1 August 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 15 Sep 2016 08:42
Last Modified: 15 Sep 2016 08:42
Published Version: http://dx.doi.org/10.1088/1742-6596/740/1/012008
Status: Published
Publisher: IOP Publishing: Conference Series
Refereed: Yes
Identification Number: https://doi.org/10.1088/1742-6596/740/1/012008

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