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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

Hasbullah, N.F., Ng, Jo Shien, Liu, Hui-Yun, Hopkinson, M., David, J., Badcock, T.J. and Mowbray, D.J. (2008) Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures. IEEE Journal of Quantum Electronics, 45 (1). pp. 79-85. ISSN 0018-9197

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Abstract

Electroluminescence (EL) measurements have been performed on a set of In(Ga)As-GaAs quantum-dot (QD) structures with varying spacer layer growth temperature. At room temperature and low injection current, a superlinear dependence of the integrated EL intensity (IEL) on the injection current is observed. This superlinearity decreases as the spacer layer growth temperature increases and is attributed to a reduction in the amount of nonradiative recombination. Temperature-dependent IEL measurements show a reduction of the IEL with increasing temperature. Two thermally activated quenching processes, with activation energies of ˜ 157 meV and ˜ 320 meV, are deduced and these are attributed to the loss of electrons and holes from the QD ground state to the GaAs barriers. Our results demonstrate that growing the GaAs barriers at higher temperatures improves their quality, thereby increasing the radiative efficiency of the QD emission.

Item Type: Article
Copyright, Publisher and Additional Information: ©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: activation energy, Activation energy, electroluminescence, electroluminescence (EL), electroluminescence measurements, gallium arsenide, III-V semiconductors, In(Ga)As-GaAs, indium compounds, injection current, multilayer quantum dot laser structures, quantum dot (QD), quantum dot emission, quantum dot lasers, radiation quenching, room temperature, spacer growth temperature, spacer layer growth temperature, thermally activated quenching process
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Simon Dimler
Date Deposited: 02 Mar 2010 14:59
Last Modified: 11 Jun 2014 08:00
Published Version: http://dx.doi.org/10.1109/JQE.2008.2002671
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/JQE.2008.2002671
URI: http://eprints.whiterose.ac.uk/id/eprint/10447

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