Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers

Chevaux, N. and De Souza, M.M. (2009) Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers. IEEE Transactions on Microwave Theory and Techniques, 57 (11). pp. 2643-2651. ISSN 0018-9480

Abstract

Metadata

Authors/Creators:
  • Chevaux, N.
  • De Souza, M.M.
Copyright, Publisher and Additional Information: © Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Efficiency; lateral diffused MOSFET (LDMOSFET); power gain (PG); stability factor; vertical diffused MOSFET (VDMOSFET)
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 03 Dec 2009 10:27
Last Modified: 05 Jun 2014 12:26
Published Version: http://dx.doi.org/10.1109/TMTT.2009.2031932
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/TMTT.2009.2031932

Download

Filename: Souza_Comparative.pdf

Share / Export

Statistics