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Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers

Chevaux, N. and De Souza, M.M. (2009) Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers. IEEE Transactions on Microwave Theory and Techniques, 57 (11). pp. 2643-2651. ISSN 0018-9480

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Abstract

A comparison between the RF performance of vertical and lateral power MOSFETs is presented. The role of each parasitic parameter in the assessment of the power gain, 1-dB compression point, efficiency, stability, and output matching is evaluated quantitatively using new analytical expressions derived from a ten-element model. This study reveals that the contribution of the parasitic parameter on degradation of performance depends upon the specific technology and generic perceptions of source inductance and feedback capacitance in VDMOS degradation may not always hold. This conclusion is supported by a detailed analysis of three devices of the same power rating from three different commercial vendors. A methodology for optimizing a device technology, specifically for RF performance and power amplifier performance is demonstrated.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Efficiency; lateral diffused MOSFET (LDMOSFET); power gain (PG); stability factor; vertical diffused MOSFET (VDMOSFET)
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 03 Dec 2009 10:27
Last Modified: 05 Jun 2014 12:26
Published Version: http://dx.doi.org/10.1109/TMTT.2009.2031932
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/TMTT.2009.2031932
URI: http://eprints.whiterose.ac.uk/id/eprint/10227

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